In this paper, the surface morphology of textured silicon substrates is explored. Prior to the surface morphology analysis, textured silicon
substrates were obtained by KOH anisotropic texturing of polished silicon wafers. This was achieved by investigating of the dependence
surface texturing on the process parameters; etchant concentration, etching time and temperature. The surface morphology of the textured
silicon samples was obtained using atomic force microscopy that was operated in the tapping mode. The resulting atomic force microscopy (AFM) images were analyzed using the Nanoscope and Gwyddion software packages. The AFM analysis revealed more surface
details such as the depth, roughness, section, and step height analysis. The analysis was limited to a length scale of a few micrometers,
which carefully reveals the number of individualities of the initial stages of pyramid growth. The average roughness was found to be
593nm for an optimally textured silicon wafer. The implications of the study are then discussed for potential light trapping application in
silicon solar cells.